A CASCADABLE INGAASP-INP OPTOELECTRONIC SMART PIXEL WITH LOW SWITCHING ENERGY

被引：9

作者：

BEYZAVI, K

KIM, DS

CHAO, CP

BURROWS, PE

FORREST, SR

机构：

[1] Advanced Technology Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1109/68.466577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate for the first time a 1.3-mu m wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 8. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel.

引用

页码：1162 / 1164

页数：3

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