AMORPHOUS-SI1-XSNX-H BY SPUTTER ASSISTED PLASMA CVD

被引：21

作者：

ITOZAKI, H

FUJITA, N

IGARASHI, T

HITOTSUYANAGI, H

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(83)90652-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：589 / 592

页数：4

共 8 条

[1] CATALANO A, 1982, 16TH P IEEE PHOT SPE, P1421
[2] LIMITING EFFICIENCIES OF IDEAL SINGLE AND MULTIPLE ENERGY-GAP TERRESTRIAL SOLAR-CELLS
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4494 - 4500
[3] KUWANO Y, 1982, 16TH P IEEE PHOT SPE, P1338
[4] Nakamura G., 1982, 16TH P IEEE PHOT SPE, P1331
[5] Verie C, 1981, IEEE, V81, P251
[6] PHOTO-LUMINESCENCE OF HYDROGENATED AMORPHOUS-CARBON FILMS
WATANABE, I
HASEGAWA, S
KURATA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06): : 856 - 859
[7] EFFECT OF HYDROGEN ON THE DEPOSITION RATE FOR PLANAR RF MAGNETRON SPUTTERING OF HYDROGENATED AMORPHOUS-SILICON
WEBB, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9043 - 9048
[8] MOSSBAUER-SPECTROSCOPY OF AMORPHOUS-SILICON TIN HYDROGEN ALLOYS
WILLIAMSON, DL
DEB, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2588 - 2592