EFFECT OF HYDROGEN ON THE DEPOSITION RATE FOR PLANAR RF MAGNETRON SPUTTERING OF HYDROGENATED AMORPHOUS-SILICON

被引：34

作者：

WEBB, JB

机构：

来源：

关键词：

D O I：

10.1063/1.330413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9043 / 9048

页数：6

共 10 条

[1] CARLSON DE, 1980, POLYCRYSTALLINE AMOR, P78
[2] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[3] KELLER JH, 1979, IBM J RES DEV, V1, P24
[4] DISCHARGE CHARACTERISTICS FOR MAGNETRON SPUTTERING OF AL IN AR AND AR-O-2 MIXTURES
MANIV, S
WESTWOOD, WD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 743 - 751
[5] EFFECT OF H-2 ON AN ARGON DISCHARGE FOR PLANAR MAGNETRON SPUTTERING
MANIV, S
WESTWOOD, WD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 403 - 406
[6] MIRZA AR, 1981, J PHYS PARIS C, V10, P659
[7] PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING
PAUL, W
ANDERSON, DA
[J]. SOLAR ENERGY MATERIALS, 1981, 5 (03): : 229 - 316
[8] PROPERTIES OF MAGNETRON SPUTTERED HYDROGENATED AMORPHOUS-SILICON
STEIN, HJ
PEERCY, PS
PECKERAR, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (04) : 797 - 810
[9] ROLE OF HYDROGEN IN SPUTTERING OF NICKEL-CHROMIUM FILMS
STERN, E
CASWELL, HL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (03): : 128 - &
[10] CALCULATION OF DEPOSITION RATES IN DIODE SPUTTERING SYSTEMS
WESTWOOD, WD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (01): : 1 - 9