OPTICAL-PROPERTIES OF ALUMINUM OXYNITRIDES DEPOSITED BY LASER-ASSISTED CVD

被引：76

作者：

DEMIRYONT, H

THOMPSON, LR

COLLINS, GJ

机构：

来源：

APPLIED OPTICS | 1986年 / 25卷 / 08期

关键词：

D O I：

10.1364/AO.25.001311

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1311 / 1318

页数：8

共 40 条

[1] AKTULGER E, 1983, THESIS ISTANBUL U TU
[2] ALLEN TH, 1982, P SOC PHOTO-OPT INST, V325, P93, DOI 10.1117/12.933291
[3] CURRENT EFFICIENCY IN PLASMA ANODIZATION OF ALUMINUM
ANDO, K
MATSUMURA, K
[J]. THIN SOLID FILMS, 1978, 52 (02) : 153 - 162
[4] Arnold H., 1976, Kristall und Technik, V11, P17, DOI 10.1002/crat.19760110104
[5] OPTICAL-PROPERTIES OF ALUMINUM NITRIDE PREPARED BY CHEMICAL AND PLASMACHEMICAL VAPOR-DEPOSITION
BAUER, J
BISTE, L
BOLZE, D
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01): : 173 - 181
[6] BAUER J, 1967, PHYS STATUS SOLIDI A, V24, P659
[7] REACTIVE ION-BEAM DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS
BHAT, S
ASHOK, S
FONASH, SJ
TONGSON, L
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (04) : 405 - 418
[8] ION-BEAM-SPUTTERED ALOXNY ENCAPSULATING FILMS
BIREY, H
PAK, SJ
SITES, JR
WAGER, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 2086 - 2089
[9] PHOTO-LUMINESCENCE OF GALLIUM-ARSENIDE ENCAPSULATED WITH ALUMINUM NITRIDE AND SILICON-NITRIDE
BIREY, H
PAK, SJ
SITES, JR
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 623 - 625
[10] ANODIZATION RATE AND AUGMENTATION FACTOR OF ANODIC ALUMINUM-OXIDE FILMS
BIREY, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2906 - 2909