OPTICAL-PROPERTIES OF ALUMINUM OXYNITRIDES DEPOSITED BY LASER-ASSISTED CVD

被引：76

作者：

DEMIRYONT, H

THOMPSON, LR

COLLINS, GJ

机构：

来源：

APPLIED OPTICS | 1986年 / 25卷 / 08期

关键词：

D O I：

10.1364/AO.25.001311

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：1311 / 1318

页数：8

相关论文

共 40 条

[31] LOW-TEMPERATURE GROWTH OF PIEZOELECTRIC AIN FILM BY RF REACTIVE PLANAR MAGNETRON SPUTTERING
SHIOSAKI, T
YAMAMOTO, T
ODA, T
KAWABATA, A
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 643 - 645
[32] PHOTODEPOSITION OF ALUMINUM-OXIDE AND ALUMINUM THIN-FILMS
SOLANKI, R
RITCHIE, WH
COLLINS, GJ
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 454 - 456
[33] INFRARED-ABSORPTION SPECTROSCOPIC STUDY OF BETA-SIALONS IN THE SYSTEM SI3N4-AL2O3-ALN
TAKASE, A
UMEBAYASHI, S
KISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1447 - 1450
[34] INFRARED SPECTROSCOPIC STUDY OF BETA-SIALONS IN THE SYSTEM SI3N4-SIO2-AIN
TAKASE, A
UMEBAYASHI, S
KISHI, K
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1982, 1 (12) : 529 - 532
[35] TAUC J, 1971, OPTICAL PROPERTIES S, P277
[36] WOUK MT, 1968, APPL PHYS LETT, V13, P286
[37] OPTICAL-PROPERTIES OF AIN EPITAXIAL THIN-FILMS IN THE VACUUM ULTRAVIOLET REGION
YAMASHITA, H
FUKUI, K
MISAWA, S
YOSHIDA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 896 - 898
[38] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
YIM, WM
STOFKO, EJ
ZANZUCCHI, PJ
PANKOVE, JI
ETTENBERG, M
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296
[39] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE FILMS ON SAPPHIRE BY REACTIVE EVAPORATION
YOSHIDA, S
MISAWA, S
ITOH, A
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (08) : 461 - 462
[40] Young L, 1961, ANODIC OXIDE FILMS

← 1 2 3 4 →