SURFACE-POTENTIAL AND SURFACE-STATE DENSITY IN ANODIZED GAAS MOS CAPACITORS

被引：34

作者：

SHIMANO, A ^{[1
]}

MORITANI, A ^{[1
]}

NAKAI, J ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN, DEPT ELECTR, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 05期

关键词：

D O I：

10.1143/JJAP.15.939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：939 / 940

页数：2

相关论文

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