STUDY OF DOPING OF INXGA1-XAS FILMS WITH GERMANIUM

被引：4

作者：

BOLKHOVITYANOV, YB ^{[1
]}

BOLKHOVITYANOVA, RI ^{[1
]}

MARCHENKO, NE ^{[1
]}

MOROZOV, BV ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 31卷 / 01期

关键词：

D O I：

10.1002/pssa.2210310134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：293 / 300

页数：8

共 18 条

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BOLKHOVITYANOVA, RI .

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[3]

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[4]

BOLKHOVITYANOV YB, 1973, KRISTALL TECHNIK, V8, P1103

[5]

Casey H. C. Jr., 1972, Journal of Crystal Growth, V13-14, P818, DOI 10.1016/0022-0248(72)90566-0

[6]

CONWELL EM, 1952, P IRE, V40, P1331

[7]

Hicks H.G.B., 1971, GAAS RELATED COMPOUN, P92

[8] ACTIVATION ENERGY OF HOLES IN ZN-DOPED GAAS [J].

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1815-&

[9]

KRAVCHENKO AF, 1972, FIZ TEKH POLUPROV, V6, P2163

[10] GE-DOPED INXGA1-XAS P-N-JUNCTIONS [J].

KURIHARA, M ;

MORIIZUMI, T ;

TAKAHASHI, K .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :763-771

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