CHARACTERISTICS OF DIFFUSED P-N JUNCTIONS IN EPITAXIAL LAYERS

[1] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P478

[2] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02): : 389 - 403

[3] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[4] Root C. D., 1960, IRE T ELECTRON DEV, V7, P279

[5] ROOT CD, 1960, IRE T ELECTRON DEV, VED7, P274

[6] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[1] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P478

[2] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02): : 389 - 403

[3] DETERMINATION OF AVALANCHE BREAKDOWN IN PN JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1613 - 1614

[4] Root C. D., 1960, IRE T ELECTRON DEV, V7, P279

[5] ROOT CD, 1960, IRE T ELECTRON DEV, VED7, P274

[6] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061