INVESTIGATION AND MODELING OF MIXED HALOGEN FREON OXYGEN PLASMA CHEMISTRIES FOR TUNGSTEN ETCHING

被引：10

作者：

DAUBENSPECK, TH ^{[1
]}

SUKANEK, PC ^{[1
]}

机构：

[1] CLARKSON UNIV,DEPT CHEM ENGN,POTSDAM,NY 13676

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 12期

关键词：

D O I：

10.1149/1.2096547

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3779 / 3786

页数：8

共 29 条

[1]

ARIS R, 1970, AM SCI, V58, P419

[2] THE KINETICS OF TUNGSTEN ETCHING BY ATOMIC AND MOLECULAR CHLORINE [J].

BALOOCH, M ;

FISCHL, DS ;

OLANDER, DR ;

SIEKHAUS, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) :2090-2095

[3]

BLEWER RS, 1986, JUN IEEE V MIC C

[4] SELECTIVE DRY ETCHING OF TUNGSTEN FOR VLSI METALLIZATION [J].

BURBA, ME ;

DEGENKOLB, E ;

HENCK, S ;

TABASKY, M ;

JUNGBLUTH, ED ;

WILSON, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) :2113-2118

[5]

Chapman B., 1980, GLOW DISCHARGE PROCE

[6]

CHAPMAN BN, 1980, J APPL PHYS, V51

[7]

CHAPMAN BN, 1978, J VAC SCI TECHNOL, V15

[8]

CHOW TP, 1984, VLSI MICROSTRUCTURE, pCH9

[9]

COBURN JW, 1980, J APPL PHYS, V51

[10]

DAUBENSPECK TH, 1988, ELECTROCHEMICAL SOC, P205

← 1 2 3 →