ALL-REFRACTORY JOSEPHSON LOGIC-CIRCUITS

被引：12

作者：

JILLIE, D

SMITH, LN

KROGER, H

CURRIER, LW

PAYER, RL

POTTER, C

SHAW, DM

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1983年 / 18卷 / 02期

关键词：

D O I：

10.1109/JSSC.1983.1051919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 180

页数：8

共 35 条

[1] OVERVIEW OF MATERIALS AND PROCESS ASPECTS OF JOSEPHSON INTEGRATED-CIRCUIT FABRICATION [J].

AMES, I .

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[2]

ARNETT PC, 1979, IEEE T MAGN, V15, P412

[3] STRUCTURE OF TUNNEL BARRIER OXIDE FOR PB-ALLOY JOSEPHSON-JUNCTIONS [J].

BAKER, JM ;

KIRCHER, CJ ;

MATTHEWS, JW .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :223-234

[4] EFFECT OF PROCESS VARIABLES ON ELECTRICAL-PROPERTIES OF PB-ALLOY JOSEPHSON-JUNCTIONS [J].

BROOM, RF ;

JAGGI, R ;

MOHR, TO ;

OOSENBRUG, A .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :206-211

[5] FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS [J].

BROOM, RF ;

LAIBOWITZ, RB ;

MOHR, TO ;

WALTER, W .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :212-222

[6] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J].

BROOM, RF ;

RAIDER, SI ;

OOSENBRUG, A ;

DRAKE, RE ;

WALTER, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) :1998-2008

[7] JOSEPHSON-JUNCTIONS OF SMALL AREA FORMED ON THE EDGES OF NIOBIUM FILMS [J].

BROOM, RF ;

OOSENBRUG, A ;

WALTER, W .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :237-239

[8]

COON DD, 1965, PHYS REV A, V138, P744

[9] BASIC DESIGN OF A JOSEPHSON-TECHNOLOGY CACHE MEMORY [J].

FARIS, SM ;

HENKELS, WH ;

VALSAMAKIS, EA ;

ZAPPE, HH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :143-154

[10] SIMPLE HIGH-PERFORMANCE CURRENT-SWITCHED JOSEPHSON GATE [J].

FULTON, TA ;

PEI, SS ;

DUNKLEBERGER, LN .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :709-711

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