EPITAXIAL-GROWTH OF YBA2CU3O7-DELTA FILMS ON OXIDIZED SILICON WITH YTTRIA-BASED AND ZIRCONIA-BASED BUFFER LAYERS

被引：31

作者：

PECHEN, EV ^{[1
]}

SCHOENBERGER, R ^{[1
]}

BRUNNER, B ^{[1
]}

RITZINGER, S ^{[1
]}

RENK, KF ^{[1
]}

SIDOROV, MV ^{[1
]}

OKTYABRSKY, SR ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,117924 MOSCOW,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.354500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of epitaxial growth of YBa2Cu3O7-delta films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZ\Y2O3 double and YSZY2O3\YSZ triple layers allows the deposition of thin YBa2Cu3O7-delta films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-delta films grown on the double buffer layers a critical temperature T(c)(R=0)=89.5 K and critical current densities of 3.5 X 10(6) A/cm2 at 77 K and 1 X 10(7) A/cm2 at 66 K were reached.

引用

页码：3614 / 3616

页数：3

共 7 条

[1] HIGH CRITICAL CURRENTS IN STRAINED EPITAXIAL YBA2CU3O7-DELTA ON SI [J].