OBSERVATION OF GAS-PHASE SI ATOMS IN THE CHEMICAL VAPOR-DEPOSITION OF SILICON FROM DICHLOROSILANE

被引：16

作者：

HO, P

BREILAND, WG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5184 / 5186

页数：3

共 24 条

[1] GAS-PHASE REACTIONS AND TRANSPORT IN SILICON EPITAXY [J].

AOYAMA, T ;

INOUE, Y ;

SUZUKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :203-207

[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL [J].

BAN, VS ;

GILBERT, SL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1382-1388

[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4 [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1389-1391

[4] GAS-PHASE SILICON ATOMS IN SILANE CHEMICAL VAPOR-DEPOSITION - LASER-EXCITED FLUORESCENCE MEASUREMENTS AND COMPARISONS WITH MODEL PREDICTIONS [J].

BREILAND, WG ;

HO, P ;

COLTRIN, ME .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1505-1513

[5] COMPARISONS BETWEEN A GAS-PHASE MODEL OF SILANE CHEMICAL VAPOR-DEPOSITION AND LASER-DIAGNOSTIC MEASUREMENTS [J].

BREILAND, WG ;

COLTRIN, ME ;

HO, P .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3267-3273

[6] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434

[7] A MATHEMATICAL-MODEL OF SILICON CHEMICAL VAPOR-DEPOSITION - FURTHER REFINEMENTS AND THE EFFECTS OF THERMAL-DIFFUSION [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1206-1213

[8] KINETICS AND MECHANISM OF THE GAS-PHASE THERMAL-DECOMPOSITION OF HEXACHLORODISILANE IN THE PRESENCE OF IODINE [J].

DONCASTER, AM ;

WALSH, R .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1980, 76 :272-279

[9]

EVERSTEYN FC, 1974, PHILIPS RES REP, V29, P45

[10] EQUILIBRIUM CALCULATIONS FOR THE SI-H-CL SYSTEM FROM 300-K TO 3000-K [J].

HERRICK, CS ;

SANCHEZMARTINEZ, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :455-458

← 1 2 3 →