GAS-PHASE REACTIONS AND TRANSPORT IN SILICON EPITAXY

被引：31

作者：

AOYAMA, T

INOUE, Y

SUZUKI, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 01期

关键词：

D O I：

10.1149/1.2119659

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：203 / 207

页数：5

相关论文

共 16 条

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
GILBERT, SL
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289
[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[3] Bird R.B., 2006, TRANSPORT PHENOMENA
[4] SILICON EPITAXY FROM MIXTURES OF SIH4 AND HC1
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1397 - &
[5] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION
BYLANDER, EG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175
[6] DUCHEMIN JP, 1977, EXTRAIT REV TECHNIQU, V9
[7] THOROUGH THERMODYNAMIC EVALUATION OF SILICON-HYDROGEN-CHLORINE SYSTEM
HUNT, LP
SIRTL, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1741 - &
[8] EQUILIBRIUM BEHAVIOR OF SILICON-HYDROGEN-CHLORINE SYSTEM
LEVER, RF
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 460 - &
[9] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON
NISHIZAWA, J
NIHIRA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89
[10] SILICON DEPOSITION ON A ROTATING-DISK
POLLARD, R
NEWMAN, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 744 - 752