USE OF SURFACE PROPERTIES FOR DETERMINING SEMICONDUCTOR BAND-GAPS

被引：10

作者：

LASSABATERE, L ^{[1
]}

ALIBERT, C ^{[1
]}

BONNET, J ^{[1
]}

SOONCKINDT, L ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CNRS,CTR ETUDES ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1976年 / 9卷 / 09期

关键词：

D O I：

10.1088/0022-3735/9/9/022

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：773 / 775

页数：3

共 7 条

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[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
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[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[3] TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2683 - 2689
[4] LASSABAT.L, 1971, CR ACAD SCI B PHYS, V273, P490
[5] OPTICAL WAVELENGTH-MODULATION SPECTROSCOPY
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[J]. SURFACE SCIENCE, 1973, 37 (01) : 522 - 539
[6] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[7] Thomson W, 1898, PHILOS MAG, V46, P82, DOI DOI 10.1080/14786449808621172