THEORETICAL-MODEL OF THE AU-FE COMPLEX IN SILICON

被引：18

作者：

ASSALI, LVC

LEITE, JR

FAZZIO, A

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.8085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8085 / 8091

页数：7

共 44 条

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[4]

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PHYSICAL REVIEW B, 1985, 32 (02) :934-954

[9] SEPARATION OF ONE-ELECTRON AND MANY-ELECTRON EFFECTS IN THE EXCITATION-SPECTRA OF 3D IMPURITIES IN SEMICONDUCTORS [J].

FAZZIO, A ;

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