MICROSCOPIC MODELS OF HG+, AU0 AND PT- ISOELECTRONIC INTERSTITIAL IMPURITIES IN SILICON

被引：5

作者：

ALVES, JLA

LEITE, JR

GOMES, VMS

ASSALI, LVC

机构：

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 04期

关键词：

D O I：

10.1016/0038-1098(85)90619-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：333 / 337

页数：5

共 31 条

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