PHOTOCURRENT REVERSAL AND CHARGE STORAGE IN AMORPHOUS SILICON-HYDROGEN TYPE DIODES

被引:3
作者
KONENKAMP, R
HERMANN, AM
MADAN, A
机构
关键词
D O I
10.1016/0022-3093(84)90328-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:249 / 254
页数:6
相关论文
共 15 条
[1]   DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON [J].
FUHS, W ;
MILLEVILLE, M ;
STUKE, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :495-502
[2]   AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J].
HOFFMANN, A ;
SCHUSTER, K .
SOLID-STATE ELECTRONICS, 1964, 7 (10) :717-724
[3]  
KONENKAMP R, 1983, PHIL MAG B, V48, P33
[4]   ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].
LECOMBER, PG ;
SPEAR, WE .
PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&
[5]  
Mott N. F., 1979, ELECT PROCESSES NONC
[6]  
NIELSEN P, 1981, B AM PHYS SOC, V26, P1067
[7]   WHAT IS THE MAJORITY CARRIER DRIFT MOBILITY IN A-SI ALLOYS [J].
SILVER, M ;
GILES, NC ;
SNOW, E .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :303-309
[8]  
SILVER M, 1983, PHILOS MAG B, V47, pL39
[9]  
SILVER M, 1982, APPL PHYS LETT, V41, P937
[10]   THE LIFETIME OF INJECTED CARRIERS IN AMORPHOUS-SILICON P-N-JUNCTIONS [J].
SNELL, AJ ;
SPEAR, WE ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :407-417