GROWTH AND CHARACTERIZATION OF BI12SIO20 FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

NAGAO, Y

MIMURA, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 12期

关键词：

D O I：

10.1109/JQE.1987.1073299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2152 / 2158

页数：7

共 16 条

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[9] POLYMORPHISM OF BISMUTH SESQUIOXIDE .2. EFFECT OF OXIDE ADDITIONS ON POLYMORPHISM OF BI2O3 [J].

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