ACCEPTOR ASSOCIATES AND BOUND EXCITONS IN GAAS-CU

被引:35
作者
WANG, ZG
GISLASON, HP
MONEMAR, B
机构
[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN
[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
关键词
D O I
10.1063/1.335717
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:230 / 239
页数:10
相关论文
共 35 条
[11]   NEUTRAL (CU-LI) COMPLEXES IN GAP - THE (CU-LI)I BOUND EXCITON AT 2.306 EV [J].
GISLASON, HP ;
MONEMAR, B ;
PISTOL, ME ;
DEAN, PJ ;
HERBERT, DC ;
KANAAH, A ;
CAVENETT, BC .
PHYSICAL REVIEW B, 1985, 31 (06) :3774-3784
[12]  
GISLASON HP, 1982, PHYS REV B, V26, P827, DOI 10.1103/PhysRevB.26.827
[13]  
GISLASON HP, 1985, J APPL PHYS, V58, P249
[14]  
GISLASON HP, UNPUB
[15]  
GLICHUK KD, 1975, PHYS STATUS SOLIDI A, V29, P339
[16]  
GLICHUK KD, 1982, PHYS STATUS SOLIDI A, V69, P521
[17]  
GROSS EF, 1967, SOV PHYS SEMICOND+, V1, P241
[18]  
GROSS EF, 1969, FIZ TVERD TELA+, V11, P277
[19]   COHERENT MODEL FOR DEEP-LEVEL PHOTO-LUMINESCENCE OF CU-CONTAMINATED N-TYPE GAAS SINGLE-CRYSTALS [J].
GUISLAIN, HJ ;
DEWOLF, L ;
CLAUWS, P .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :83-108
[20]   DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].
HALL, RN ;
RACETTE, JH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&