FORMATION OF GAS-PHASE SILYL RADICALS IN THE ATOMIC-HYDROGEN ETCHING OF SILICON

被引：9

作者：

JASINSKI, JM

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

CHEMICAL PHYSICS LETTERS | 1993年 / 211卷 / 06期

关键词：

D O I：

10.1016/0009-2614(93)80144-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms.

引用

页码：564 / 570

页数：7

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