PREPARATION OF BA2NANB5O15 FILM BY RF MAGNETRON SPUTTERING METHOD

被引：25

作者：

MASUDA, Y ^{[1
]}

MASUMOTO, H ^{[1
]}

BABA, A ^{[1
]}

GOTO, T ^{[1
]}

HIRAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

TUNGSTEN-BRONZE STRUCTURE; BA2NANB5O15; FERROELECTRIC; RF MAGNETRON SPUTTERING; PT ELECTRODE; FILM THICKNESS; ORTHORHOMBIC-TETRAGONAL PHASE TRANSITION;

D O I：

10.1143/JJAP.32.4043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A film with tungsten-bronze structure was formed on a Pt/Al2O3 substrate by a RF msagnetron sputtering method. The deposition ratio of the films (Ba:Na:Nb) depended on the sputtering gas pressure. When the deposition rates were 10 nm/min at 10(-1) Pa and 5 nm/min at 8 Pa, the dielectric constant and the dielectric loss factor were 141 and 0.02 at room temperature, respectively, and the remanent polarization P(r) and the coercive field E(c) were 32 muC/cm2 and 576 V/mm, respectively.

引用

页码：4043 / 4047

页数：5