EVIDENCE THAT THE GOLD DONOR AND ACCEPTOR IN SILICON ARE 2 LEVELS OF THE SAME DEFECT

被引:44
作者
LEDEBO, LA [1 ]
WANG, ZG [1 ]
机构
[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN
关键词
D O I
10.1063/1.94070
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:680 / 682
页数:3
相关论文
共 4 条
[1]  
GRIMMEISS HG, 1982, THESIS LUND
[2]   COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON [J].
LANG, DV ;
GRIMMEISS, HG ;
MEIJER, E ;
JAROS, M .
PHYSICAL REVIEW B, 1980, 22 (08) :3917-3934
[3]  
Wang Z. C., UNPUB
[4]   CAPTURE CROSS-SECTIONS OF THE GOLD DONOR AND ACCEPTOR STATES IN N-TYPE CZOCHRALSKI SILICON [J].
WU, RH ;
PEAKER, AR .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :643-649