THE MOS DEPLETION-MODE THYRISTOR - A NEW MOS-CONTROLLED BIPOLAR POWER DEVICE

[1] [Anonymous], 1987, MODERN POWER DEVICES

[2] BALIGA BJ, 1979, ELECTRON LETT, V15, P645, DOI 10.1049/el:19790459

[3] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 821 - 828

[4] CHANG HR, 1987, IEDM, P674

[5] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 63 - 65

[6] Stoisiek M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P158

[7] Temple V. A. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P282

[1] [Anonymous], 1987, MODERN POWER DEVICES

[2] BALIGA BJ, 1979, ELECTRON LETT, V15, P645, DOI 10.1049/el:19790459

[3] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 821 - 828

[4] CHANG HR, 1987, IEDM, P674

[5] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 63 - 65

[6] Stoisiek M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P158

[7] Temple V. A. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P282