ELECTRICAL STUDY OF SCHOTTKY-BARRIER HEIGHTS ON ATOMICALLY CLEAN P-TYPE INP(110) SURFACES

被引：45

作者：

NEWMAN, N

VANSCHILFGAARDE, M

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6298 / 6304

页数：7

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