MINERAL PRECURSOR FOR CHEMICAL VAPOR-DEPOSITION OF RH METALLIC-FILMS

被引:13
作者
DOPPELT, P
WEIGEL, V
GUINOT, P
机构
[1] ESPCI-CNRS, Laboratoire de chimie et d'électrochimie des matériaux moléculaires (URA 429), 75231 Paris Cedex 05
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 17卷 / 1-3期
关键词
D O I
10.1016/0921-5107(93)90096-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Di-mu-chloro-tetrakis(trifluorophosphine)dirhodium(I) ((PF3)2RhCl)2, was synthesized by using the method of Bennett and Patmore, and was purified twice by sublimation. The decomposition reaction of the complex studied by Fourier transform IR spectroscopy in the vapor phase showed that no volatile species except the complex and PF3 were present in the gas phase. We used this mineral precursor to obtain metallic Rh films by chemical vapor deposition under very mild conditions (T<200-degrees-C, P=3-10 Torr) on Pyrex glass slides or NaCl substrates. The smooth Rh films obtained, with a mirror-like aspect, have been characterized by X-ray diffraction (indicating a crystalline nature, f.c.c., F(m3mBAR) with a=3.806(2) angstrom), transmission electron microscopy (800 angstrom x 50 angstrom x 50 angstrom single crystals are present) and X-ray photo-electron spectroscopy. Neither P nor F atoms could be detected, but a significative amount of Cl atoms was present in the films identified as RhCl3.
引用
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页码:143 / 146
页数:4
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