ANNEALING EFFECTS ON ELECTRICAL-PROPERTIES OF THERMAL-NEUTRON TRANSMUTATION DOPED GE

被引：15

作者：

KURIYAMA, K

YAHAGI, M

IWAMURA, K

KIM, Y

KIM, C

机构：

[1] HOSEI UNIV, ION BEAM TECHNOL RES CTR, KOGANEI, TOKYO 184, JAPAN

[2] KOREA UNIV, DEPT ELECT ENGN, SEOUL, SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：673 / 676

页数：4

共 7 条

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[2]

GLAIRON PJ, 1978, NEUTRON TRANSMUTATIO, P291

[3]

HANNAY NB, 1959, SEMICONDUCTORS, P341

[4] HIGH-RESISTIVITY N-TYPE SILICON DETECTORS PRODUCED BY NEUTRON TRANSMUTATION DOPING [J].

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HUSIMI, K ;

OHKAWA, S ;

FUCHI, Y .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :292-296

[5]

Lederer C. M., 1978, TABLE ISOTOPE

[6] DOPING OF SEMI-INSULATING AND N-TYPE GAAS BY NEUTRON TRANSMUTATION [J].

MUELLER, JE ;

KELLNER, W ;

KNIEPKAMP, H ;

HAAS, EW ;

FISCHER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3178-3180

[7] TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM [J].

WILLARDSON, RK ;

HARMAN, TC ;

BEER, AC .

PHYSICAL REVIEW, 1954, 96 (06) :1512-1518

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