HIGH-RESISTIVITY N-TYPE SILICON DETECTORS PRODUCED BY NEUTRON TRANSMUTATION DOPING

High resistivity N-type silicons produced from high purity P-type silicon by neutron transmutation doping are used for fabrication of surface barrier detectors. It has been shown that the materials tested have properties as good as those produced by the conventional floating-zone (FZ) method. The resistivity distribution in a silicon rod produced by this method is expected to be better compared with those obtained by the FZ method, and the resistivity itself is also easily controlled by an irradiation dose of neutrons. The radiation damage produced by neutron bombardments seems to be removed by an annealing treatment. The residual radio-activity induced by irradiation of neutrons has almost negligible effects on the performance of the detector except for low background applications. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.