APPLICATION OF THERMAL-NEUTRON IRRADIATION FOR LARGE-SCALE PRODUCTION OF HOMOGENEOUS PHOSPHORUS DOPING OF FLOATZONE SILICON

被引：54

作者：

JANUS, HM ^{[1
]}

MALMROS, O ^{[1
]}

机构：

[1] TOPSIL AS, DK-3600 FREDERIKSSUND, DENMARK

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 08期

关键词：

D O I：

10.1109/T-ED.1976.18487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：797 / 802

页数：6

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