PREPARATION AND APPLICATION OF NEUTRON TRANSMUTATION DOPED SILICON FOR POWER DEVICE RESEARCH

被引：20

作者：

HILL, MJ ^{[1
]}

VANISEGHEM, PM ^{[1
]}

ZIMMERMANN, W ^{[1
]}

机构：

[1] BROWN BOVERI & CO LTD, RES CTR,CH-5401 BADEN,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 08期

关键词：

D O I：

10.1109/T-ED.1976.18490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：809 / 813

页数：5

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[9] PREPARATION OF UNIFORM RESISTIVITY N-TYPE SILICON BY NUCLEAR TRANSMUTATION [J].

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[10] MEASUREMENT OF SPATIAL VARIATIONS OF CARRIER LIFETIME IN SILICON POWER DEVICES [J].

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