INFLUENCE OF DOPING INHOMOGENEITIES ON REVERSE CHARACTERISTICS OF SEMICONDUCTOR POWER DEVICES

被引：8

作者：

CORNU, J ^{[1
]}

SITTIG, R ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR,SEMICOND DEVICES GRP,CH-5401 BADEN,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 03期

关键词：

D O I：

10.1109/T-ED.1975.18088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 114

页数：7

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[3]

KESSEL H, 1967, RCA REV, V28

[4]

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[5]

OGAWA H, 1966, IEEE DEVICE, VED13, P754

[6] DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON [J].

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SHOCKLEY, W .

PHYSICAL REVIEW, 1961, 123 (04) :1245-&

[7]

RAVI KV, SEMICONDUCTOR SILICO, P136

[8] SECOND BREAKDOWN - A COMPREHENSIVE REVIEW [J].

SCHAFFT, HA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1272-+

[9]

Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]

[10] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].

SZE, SM ;

GIBBONS, G .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&

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