FLOAT-ZONED SILICON WITH HOMOGENEOUS DOPANT DISTRIBUTION

被引:6
作者
KELLER, W [1 ]
MUHLBAUER, A [1 ]
机构
[1] SIEMENS AG, WERK HALBLEITER, MUNICH, WEST GERMANY
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 25卷 / 01期
关键词
D O I
10.1002/pssa.2210250112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:149 / 152
页数:4
相关论文
共 4 条
[1]  
Barthel J., 1973, Kristall und Technik, V8, P199, DOI 10.1002/crat.19730080120
[2]  
KELLER W, 1973, FEINWERKTECHNIK, V77, P107
[3]   LAMELLAR GROWTH PHENOMENA IN (111)-ORIENTED DISLOCATION-FREE FLOAT-ZONED SILICON SINGLE-CRYSTALS [J].
MUHLBAUER, A ;
SIRTL, E .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (02) :555-565
[4]   BREAKDOWN BEHAVIOR OF RECTIFIERS AND THYRISTORS MADE FROM STRIATION-FREE SILICON [J].
SCHNOLLER, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) :313-314