MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES

被引：27

作者：

LANGE, MD

SIVANANTHAN, S

CHU, X

FAURIE, JP

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：978 / 980

页数：3

共 10 条

[1]

BHAT IB, 1987, 1987 US WORKSH PHYS, P9

[2] MBE GROWTH OF CDTE, HG1-XCDXTE, AND MULTILAYER STRUCTURES - ACHIEVEMENTS, PROBLEMS, AND PROSPECTS [J].

FARROW, RFC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :60-66

[3] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION [J].

FAURIE, JP ;

HSU, C ;

SIVANANTHAN, S ;

CHU, X .

SURFACE SCIENCE, 1986, 168 (1-3) :473-482

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CD1-XZNXTE, HG1-XCDXTE,HG1-XMNXTE, AND HG1-XZNXTEONGAAS(100) [J].

FAURIE, JP ;

RENO, J ;

SIVANANTHAN, S ;

SOU, IK ;

CHU, X ;

BOUKERCHE, M ;

WIJEWARNASURIYA, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :585-589

[5] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[6]

IRVINE SJC, 1987, UNPUB 1987 US WORKSH

[7] MOLECULAR-BEAM DISTRIBUTIONS FROM HIGH-RATE SOURCES [J].

JACKSON, SC ;

BARON, BN ;

ROCHELEAU, RE ;

RUSSELL, TWF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (05) :1916-1920

[8]

OTSUKA N, 1984, NOV P MAT RES SOC M

[9] RELATION BETWEEN CRYSTALLOGRAPHIC ORIENTATION AND THE CONDENSATION COEFFICIENTS OF HG, CD, AND TE DURING MOLECULAR-BEAM-EPITAXIAL GROWTH OF HG1-XCDXTE AND CDTE [J].

SIVANANTHAN, S ;

CHU, X ;

RENO, J ;

FAURIE, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1359-1363

[10]

SIVANANTHAN S, IN PRESS J VAC SCI T

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