MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES

被引:27
作者
LANGE, MD
SIVANANTHAN, S
CHU, X
FAURIE, JP
机构
关键词
D O I
10.1063/1.99247
中图分类号
O59 [应用物理学];
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页码:978 / 980
页数:3
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