BELOW-BAND-GAP PHOTON RECYCLING IN ALXGA1-XAS

被引：9

作者：

BRADSHAW, JL ^{[1
]}

DEVATY, RP ^{[1
]}

CHOYKE, WJ ^{[1
]}

MESSHAM, RL ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：165 / 167

页数：3

共 10 条

[1]

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[2] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP [J].

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LORIMOR, OG .

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[3]

BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P205

[4]

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[5]

EPIFNOV MS, 1976, SOV PHYS SEMICOND, V9, P1008

[6]

GARBUZOV DZ, 1988, SEMICONDUCTOR PHYSIC, P53

[7] EFFECT OF PHOTON RECYCLING ON DIFFUSION LENGTH AND INTERNAL QUANTUM EFFICIENCY IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

KURIYAMA, T ;

KAMIYA, T ;

YANAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (03) :465-477

[8] EVIDENCE FOR PHOTON RECYCLING IN INP [J].

LESTER, SD ;

KIM, TS ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :474-476

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

NELSON, RJ ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :761-763

[10] PHOTON RECYCLING IN SEMICONDUCTOR LASERS [J].

STERN, F ;

WOODALL, JM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3904-3906

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