PHOTON RECYCLING IN SEMICONDUCTOR LASERS

被引：95

作者：

STERN, F ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3904 / 3906

页数：3

共 11 条

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[3]

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[8] BEHAVIOR OF SPONTANEOUS EMISSION ACROSS THRESHOLD IN GAAS JUNCTION LASERS [J].

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APPLIED PHYSICS LETTERS, 1972, 21 (03) :98-&

[9] CURRENT DEPENDENCE OF INTENSITY OF SPONTANEOUS EMISSION OF GAAS INJECTION LASERS TO FULL OPERATING POWER [J].

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[10] TRANSMISSION OF ISOTROPIC RADIATION ACROSS INTERFACE BETWEEN 2 DIELECTRICS [J].

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