ELECTRONIC-PROPERTIES OF SI ATOMIC-PLANAR-DOPED GAAS/ALAS QUANTUM-WELL STRUCTURES GROWN BY MBE

被引：9

作者：

SASA, S

KONDO, K

ISHIKAWA, H

FUJII, T

MUTO, S

HIYAMIZU, S

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90448-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：433 / 438

页数：6

共 8 条

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