OXIDATION OF TITANIUM THIN-FILMS

被引：18

作者：

SYLWESTROWICZ, WD ^{[1
]}

机构：

[1] FAIRLEIGH DICKINSON UNIV,MADISON,NJ 07940

来源：

关键词：

D O I：

10.1149/1.2134053

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1504 / 1508

页数：5

共 6 条

[1] TITANIUM-DIOXIDE DIELECTRIC FILMS PREPARED BY VAPOR REACTION [J].

FEUERSANGER, AE .

[2]

GIAEVER I, 1967, TUNNELING PHENOMENA, P19

[3]

KLOPFER A, 1959, VAKUUM TECH, V8, P162

[4] ROOM TEMPERATURE OXIDATION OF TITANIUM THIN FILMS [J].

MINDEL, MJ ;

POLLACK, SR .

ACTA METALLURGICA, 1969, 17 (12) :1441-&

[5] OXIDATION OF TITANIUM BETWEEN 25 DEGREES C AND 400 DEGREES C [J].

SMITH, T .

[6] STRUCTURE AND GROWTH OF THIN FILMS ON METALS EXPOSED TO OXYGEN [J].

UHLIG, HH .