EXCESS CARRIER DENSITIES IN AMORPHOUS-SILICON DOPING-MODULATED MULTILAYERS

被引：5

作者：

CHEN, I

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8433 / 8435

页数：3

共 9 条

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES [J].

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1983, 51 (21) :2003-2006

[2] THEORETICAL ANALYSES OF SPACE-CHARGE DOPING IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES .2. COMPOSITIONAL SUPERLATTICES [J].

CHEN, I .

PHYSICAL REVIEW B, 1985, 32 (02) :885-889

[3] THEORETICAL ANALYSES OF SPACE-CHARGE DOPING IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES .1. DOPING SUPERLATTICES [J].

CHEN, I .

PHYSICAL REVIEW B, 1985, 32 (02) :879-884

[4] LUMINESCENCE AND TRANSPORT IN A-SI-H-A-SI1-XNX-H QUANTUM WELL STRUCTURES [J].

HIROSE, M ;

MIYAZAKI, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :327-338

[5] PROPERTIES OF AMORPHOUS SEMICONDUCTING MULTILAYER FILMS [J].

KAKALIOS, J ;

FRITZSCHE, H ;

IBARAKI, N ;

OVSHINSKY, SR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :339-344

[6] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

[7] EVIDENCE FOR LATTICE-MISMATCH INDUCED DEFECTS IN AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS [J].

ROXLO, CB ;

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW LETTERS, 1984, 52 (22) :1994-1997

[8] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J].

SPEAR, WE ;

STEEMERS, HL ;

LECOMBER, PG ;

GIBSON, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :L33-L40

[9] BANDGAP AND RESISTIVITY OF AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

TIEDJE, T ;

ABELES, B ;

PERSANS, PD ;

BROOKS, BG ;

CODY, GD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :345-350

← 1 →