COPPER OUTDIFFUSION FROM CDZNTE SUBSTRATES AND ITS EFFECT ON THE PROPERTIES OF METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN HGCDTE

被引：12

作者：

KORENSTEIN, R ^{[1
]}

OLSON, RJ ^{[1
]}

LEE, D ^{[1
]}

LIAO, PK ^{[1
]}

CASTRO, CA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 05期

关键词：

CDZNTE; HGCDTE; IMPURITIES; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); TE PRECIPITATES;

D O I：

10.1007/BF02657955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report that HgCdTe (MCT) epilayers grown by metalorganic chemical vapor deposition can be doped by copper outdiffusing from CdZnTe substrates. The copper content in the substrates was determined by the choice of the purity of the starting raw materials. Copper diffusion could be controlled by adjusting the tellurium precipitate density in the substrates. Growing on substrates with a high concentration of tellurium precipitates resulted in low doped MCT epilayers whereas a high copper concentration was found in MCT grown on substrates with a lower concentration of tellurium precipitates. A mechanism whereby tellurium precipitates getter copper during the post-growth cooldown of CdZnTe boules and trap copper in the substrates is proposed.

引用

页码：511 / 514

页数：4

共 8 条

[1] INVERTED SURFACE EFFECT OF P-TYPE HGCDTE [J].