THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTOR TECHNOLOGY

This paper reviews those characterization techniques that have played significant roles in the development of HgCdTe infrared detector technology. We focus on the two specific HgCdTe devices that have achieved widespread application for infrared detection in the LWIR (8-12 mum) and VLWIR (12-20 mum) spectral regions: the simple n-type photoconductor and the P-on-n LPE heterojunction photodiode. We review the device physics of these two detectors, relate device performance to starting material properties and processing parameters, and describe the most important characterization techniques that have had a role in their development.