COMPOSITIONAL ANALYSIS OF HGCDTE EPITAXIAL LAYERS USING SECONDARY ION MASS-SPECTROMETRY

被引：17

作者：

BUBULAC, LO ^{[1
]}

EDWALL, DD ^{[1
]}

CHEUNG, JT ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The work reported here elaborates on the emission of the secondary Te- ions from secondary ion mass spectrometry (SIMS) analysis of HgCdTe using a Cs+ primary ion beam. Investigations of numerous samples covering a wide compositional range showed excellent linear correlation between negative Te ion yield and Cd mole fraction. These led to the newly developed SIMS analytical method for measuring the changes in the composition of Hg1-xCdxTe with high sensitivity and depth resolution. A physical model describing the emission of secondary Te- ions is proposed. The results can be interpreted by considering the short range interaction between reactive Cs primary beam and the CdTe sublattice via a "harpoon" mechanism. The relevance of this method to the development of Hg1-xCdxTe was demonstrated on metalorganic chemical vapor deposition grown heterostructures.

引用

页码：1633 / 1637

页数：5

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