BURIED-CHANNEL GAAS-MESFETS WITH FREQUENCY-INDEPENDENT OUTPUT CONDUCTANCE

被引:21
作者
CANFIELD, PC
MEDINGER, J
FORBES, L
机构
关键词
D O I
10.1109/EDL.1987.26561
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:88 / 89
页数:2
相关论文
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[2]   SUPRESSION OF DRAIN CONDUCTANCE TRANSIENTS, DRAIN CURRENT OSCILLATIONS, AND LOW-FREQUENCY GENERATION RECOMBINATION NOISE IN GAAS-FETS USING BURIED CHANNELS [J].
CANFIELD, PC ;
FORBES, L .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :925-928
[3]  
LAGOWSKI J, 1984, 3RD P SEM 3 5 MAT C, P222
[4]  
LARSON LE, 1985 GAAS IC S DIG, P19
[5]  
MCCAMANT A, 1986, COMMUNICATION