HYBRID PROTECTIVE DEVICE FOR MOS-LSI CHIPS

被引:3
作者
DELAMONEDA, FH [1 ]
DEBAR, DE [1 ]
STUBY, KP [1 ]
BERTIN, CL [1 ]
机构
[1] IBM CORP,DIV SYST COMMUN,MANASSAS,VA 22110
来源
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING | 1976年 / 12卷 / 03期
关键词
D O I
10.1109/TPHP.1976.1135132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:172 / 175
页数:4
相关论文
共 8 条
[1]   NANOSECOND-PULSE MICROWAVE BREAKDOWN IN AIR [J].
FELSENTHAL, P .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (12) :4557-+
[2]  
GOETZBERGER A, 1968, J APPL PHYS, V38, P4582
[3]  
KENNEDY DP, 1973, IEDM, P160
[4]   GATE PROTECTION OF MIS DEVICES [J].
LENZLINGER, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (04) :249-+
[5]  
LINHOLM LW, 1973, APR P ANN REL PHYS S, P198
[6]  
ORCHARDWEBB JH, 1973, IEDM TECH DIGEST, P240
[7]  
SIMONIC RB, 1974, COMMUNICATION JUN
[8]   SECOND-BREAKDOWN PHENOMENA IN AVALANCHING SILICON ON SAPPHIRE DIODES [J].
SUNSHINE, RA ;
LAMPERT, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) :873-+