SECOND-BREAKDOWN PHENOMENA IN AVALANCHING SILICON ON SAPPHIRE DIODES

被引：15

作者：

SUNSHINE, RA

LAMPERT, MA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 07期

关键词：

D O I：

10.1109/T-ED.1972.17512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：873 / +

页数：1

共 23 条

[1] TURNOVER PHENOMENON OF N+N N+ PLATE CONTACT SILICON DEVICE AND 2ND BREAKDOWN IN TRANSISTORS [J].

AGATSUMA, T ;

KOHISA, T ;

SUGIYAMA, A .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (01) :95-+

[2] THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS [J].

ALLISON, JF ;

DUMIN, DJ ;

HEIMAN, FP ;

MUELLER, CW ;

ROBINSON, PH .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1490-+

[3] SECOND BREAKDOWN IN MOS TRANSISTORS [J].

ASAKAWA, T ;

TSUBOUCHI, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :811-+

[4] THERMAL INSTABILITY IN VERY SMALL P-N JUNCTIONS [J].

CHIANG, KL ;

LAURITZEN, PO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :782-+

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6] EMISSION OF VISIBLE RADIATION FROM EXTENDED PLASMAS IN SILICON DIODES DURING SECOND BREAKDOWN [J].

DUMIN, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :479-+

[7] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J].

DUMIN, DJ ;

SILVER, RS .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :353-+

[8] INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS [J].

FERRY, DK ;

DOUGAL, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :627-+

[9] THERMAL BREAKDOWN DELAY TIME IN SILICON P-N JUNCTIONS [J].

FLEMING, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) :94-+

[10]

GORDON FI, 1969, DEC P CAM TUB S

← 1 2 3 →