TURNOVER PHENOMENON OF N+N N+ PLATE CONTACT SILICON DEVICE AND 2ND BREAKDOWN IN TRANSISTORS

被引：13

作者：

AGATSUMA, T

KOHISA, T

SUGIYAMA, A

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 01期

关键词：

D O I：

10.1109/PROC.1965.3545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / +

页数：1

共 9 条

[1] AGATSUMA T, TO BE PUBLISHED
[2] AGATSUMA T, 1963, 349 M I EL COMM ENGR
[3] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS
ENGLISH, AC
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 511 - 521
[4] AVALANCHE INJECTION DIODES
GIBSON, AF
MORGAN, JR
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 54 - 69
[5] SECONDARY BREAKDOWN IN TRANSISTORS
MELCHIOR, H
STRUTT, MJ
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &
[6] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON
PUTLEY, EH
MITCHELL, WH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200
[7] Schafft H., 1962, IRE T ELECTRON DEV, V9, P129
[8] THORNTON CG, 1958, IRE T ELECTRON DEV, VED5, P6
[9] BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM PARA-NORMAL JUNCTION
YAMAGUCHI, J
HAMAKAWA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (02) : 232 - 233