2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES

被引：5

作者：

EIZENBERG, M

TU, KN

PALMSTROM, CJ

MAYER, JW

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.95409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：905 / 907

页数：3

共 9 条

[1]

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[3] INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS [J].

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MAYER, JW .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1015-1017

[4] THERMAL-STABILITY OF DIFFUSION-BARRIERS FOR ALUMINUM-ALLOY PLATINUM SILICIDE CONTACTS [J].

MERCHANT, P ;

AMANO, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :459-462

[5] THIN-FILM INTERACTION IN ALUMINUM AND PLATINUM [J].

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BLECH, IA ;

LEVINSTEIN, HJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5175-5181

[6] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J].

NICOLET, MA ;

BARTUR, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :786-793

[7]

Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[8]

SOLOMONSON G, 1981, PHYS SCR, V24, P401

[9]

TING CY, 1982, J ELECTROCHEM SOC, V129, P2591

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