MULTIPARAMETER MEASUREMENTS OF THIN-FILMS USING BEAM-PROFILE REFLECTOMETRY

被引:24
作者
FANTON, JT
OPSAL, J
WILLENBORG, DL
KELSO, SM
ROSENCWAIG, A
机构
[1] Therma-Wave, Inc., Fremont
关键词
D O I
10.1063/1.352421
中图分类号
O59 [应用物理学];
学科分类号
摘要
Beam-profile reflectometry is a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. The technique consists of measuring the intensity profile of a highly focused beam reflected from the sample. By using a linearly polarized light source and a tightly focussed beam, the S- and P-polarization reflectivities of the film are simultaneously obtained over a wide range of angles. The focusing also provides a submicrometer spot, thus allowing these measurements to be performed in very small geometries. How the information present in the reflectivity profiles can reveal information about as many as three unknown film parameters simultaneously is described, and results from film samples for which the multiparameter fitting capability was essential to the success of the measurement are also presented.
引用
收藏
页码:7035 / 7040
页数:6
相关论文
共 8 条
[1]  
Azzam R.M.A., 1979, ELLIPSOMETRY POLARIZ
[2]  
Heavens O.S, 1991, OPTICAL PROPERTIES T
[3]   SIMULTANEOUS MEASUREMENT OF REFRACTIVE-INDEX AND THICKNESS OF THIN-FILM BY POLARIZED REFLECTANCES [J].
KIHARA, T ;
YOKOMORI, K .
APPLIED OPTICS, 1990, 29 (34) :5069-5073
[4]   NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].
PLISKIN, WA ;
CONRAD, EE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&
[5]  
PLISKIN WA, 1969, PROGR ANAL CHEM, V2, P1
[6]  
Ramo S., 1985, FIELDS WAVES COMMUNI
[7]   OPTICAL THICKNESS MEASUREMENT OF SIO2-SI3N4 FILMS ON SILICON [J].
REIZMAN, F ;
VANGELDE.W .
SOLID-STATE ELECTRONICS, 1967, 10 (07) :625-&
[8]   BEAM PROFILE REFLECTOMETRY - A NEW TECHNIQUE FOR DIELECTRIC FILM MEASUREMENTS [J].
ROSENCWAIG, A ;
OPSAL, J ;
WILLENBORG, DL ;
KELSO, SM ;
FANTON, JT .
APPLIED PHYSICS LETTERS, 1992, 60 (11) :1301-1303