CATHODOLUMINESCENCE STUDIES OF DISLOCATIONS IN SEMICONDUCTORS

被引：7

作者：

DUPUY, M

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983433

中图分类号：

学科分类号：

摘要：

引用

页码：277 / 287

页数：11

共 72 条

[61]

RASUL A, 1977, SCANNING ELECTRON MI, V1, P233

[62]

RASUL A, 1981, I PHYS C SER, V60, P306

[63] HIGH-RESOLUTION IN SCANNING CATHODOLUMINESCENCE OF ZNS EDGE EMISSION [J].

ROBERTS, SH ;

STEEDS, JW .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :312-316

[64]

SCHILLER C, 1977, I PHYS C SER A, V33, P25

[65] CATHODOLUMINESCENCE LIFETIME PATTERN OF GAAS-SURFACES AROUND DISLOCATIONS [J].

STECKENBORN, A ;

MUNZEL, H ;

BIMBERG, D .

JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) :351-354

[66]

STECKENBORN A, 1981, I PHYS C SER, V60, P185

[67] CATHODOLUMINESCENCE EVIDENCE OF DISLOCATION INTERACTIONS IN DIAMOND [J].

SUMIDA, N ;

LANG, AR .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05) :1277-1287

[68]

Sumida N., 1981, I PHYS C SER, V60, P319

[69] CARRIER RECOMBINATION AT DISLOCATIONS IN EPITAXIAL GALLIUM-PHOSPHIDE LAYERS [J].

TITCHMARSH, JM ;

BOOKER, GR ;

HARDING, W ;

WIGHT, DR .

JOURNAL OF MATERIALS SCIENCE, 1977, 12 (02) :341-346

[70] MULTIPHONON RECOMBINATION PROCESSES [J].

TOYOZAWA, Y .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1313-1318

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