SPIN-POLARIZED ELECTRONS FROM INXGA1-XAS THIN-FILMS

被引：6

作者：

MEIER, F

GROBLI, JC

GUARISCO, D

VATERLAUS, A

YASHIN, Y

MAMAEV, Y

YAVICH, B

KOCHNEV, I

机构：

[1] ST PETERSBURG TECH UNIV,DIV EXPTL PHYS,ST PETERSBURG,RUSSIA

[2] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

PHYSICA SCRIPTA | 1993年 / T49B卷

关键词：

D O I：

10.1088/0031-8949/1993/T49B/034

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using optical spin orientation photoelectrons with spin polarization above 50% have been extracted from strained III-V semiconductors. The new sources consist of an epitaxial overlayer having a smaller energy gap and a slightly larger lattice constant than the substrate material. The tensile stress along the surface normal lifts the orbital degeneracy of the levels at the valence band maximum such that the polarization is enhanced compared to the unstrained cubic material.

引用

收藏

页码：574 / 578

页数：5

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