SILICON SURFACE TUNNEL TRANSISTOR

被引：271

作者：

REDDICK, WM ^{[1
]}

AMARATUNGA, GAJ ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.114547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A silicon surface tunneling transistor structure, based on lateral band-to-band tunneling, is presented. The theory, fabrication, and operation of the device is described. Band-to-band tunneling is controlled by the bias on the gate of the device which modulates the width of the tunneling barrier. The operation of the device is confirmed in both experimental results and two-dimensional computer simulations. Dramatic differences in drain current are observed for different gate bias. (C) 1995 American Institute of Physics.

引用

页码：494 / 496

页数：3

共 9 条

[1] NEGATIVE TRANSCONDUCTANCE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR
CAPASSO, F
SEN, S
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 526 - 528
[2] LATERAL RESONANT TUNNELING TRANSISTORS EMPLOYING FIELD-INDUCED QUANTUM-WELLS AND BARRIERS
CHOU, SY
ALLEE, DR
PEASE, RF
HARRIS, JS
[J]. PROCEEDINGS OF THE IEEE, 1991, 79 (08) : 1131 - 1139
[3] GATED RESONANT TUNNELING DEVICES
DELLOW, MW
BETON, PH
HENINI, M
MAIN, PC
EAVES, L
BEAUMONT, SP
WILKINSON, CDW
[J]. ELECTRONICS LETTERS, 1991, 27 (02) : 134 - 136
[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[5] APPROACHING THE QUANTUM LIMIT
HESS, K
IAFRATE, GJ
[J]. IEEE SPECTRUM, 1992, 29 (07) : 44 - 49
[6] SZE S, 1990, HIGH SPEED SEMICONDU, P524
[7] UEMURA T, 1993, I PHYS C SER, V129, P353
[8] WOODWARD T, 1983, SUPERLATTICE MICROST, V4, P1
[9] 1993, TMA MEDICI USERS MAN

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