PROBING OF BASAL PLANES OF MOS2 BY SCANNING TUNNELING MICROSCOPY

被引：32

作者：

SARID, D

HENSON, TD

ARMSTRONG, NR

BELL, LS

机构：

[1] UNIV ARIZONA,DEPT CHEM,TUCSON,AZ 85721

[2] UNIV ARIZONA,LUNAR & PLANETARY LAB,TUCSON,AZ 85721

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2252 / 2254

页数：3

共 18 条

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[7]

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TERSOFF, J .

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[9] A LAMELLAR-III-VI SEMICONDUCTOR COMPOUND (GASE) INVESTIGATED BY SCANNING TUNNELING MICROSCOPY [J].

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[10] SCANNING TUNNELING MICROSCOPY OF SEMICONDUCTOR CLUSTERS [J].

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